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Fujio Masuoka (Fujio Masuoka) (8.05.1943) (Solid State Electronics, Research Institute of Elctrical Communication, Tohoku University)
Professor Fujio Masuoka received the B.S., M.S., and Ph.D. degrees in electrical engineering from Tohoku University, Sendai, Japan, in 1966, 1968, 1971, respectively.
In 1971 he joined the Toshiba Research and Developement Center, TOSHIBA Co., Ltd.
He moved to Tohoku University as a professor in 1994.
He has been engaged in the research and development of MOS device. Especially he has been engaged in large integrated memory i.e. Flash memory,EEPROM,EPROM,DRAM,SRAM,image sensor i.e. CCD image sensor and high speed logic,using silicon or compound semiconductors.
Dr. Masuoka is a member of the Institute of Electrical and Electronics Engineers (IEEE), and the Institute of Electronics, Information and Communication Engineers (IEICE).
Patents assigned to Masuoka; Fujio (Miyagi, JP): Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layer
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